台湾松木ME4435/ME4435-G/P沟道MOS管

ME4435/ME4435-G，P沟道30V (D-S) MOSFET

一般说明

ME4435是P沟道逻辑增强型功率场，效应晶体管采用高单元密度、DMOS沟槽技术生产。这种高密度工艺特别适用于最小化导通电阻。这些器件特别适用于低电压应用，如手机和笔记本电脑、计算机电源管理和其他电池供电电路，这些应用需要在非常小的外形表面贴装封装中实现高侧开关和低在线功率损耗。

应用

● 笔记本电源管理

● 便携设备

● 电池供电系统

● DC/DC 转换器

● 负载开关

● DSC

● LCD 显示逆变器

　　ME4435/ME4435-G，P-Channel 30V (D-S) MOSFET

　　GENERAL DESCRIPTION

　　The ME4435 is the P-Channel logic enhancement mode power field，effect transistors are produced using high cell density , DMOS trench ，technology. This high density process is especially tailored to ，minimize on-state resistance. These devices are particularly suited，for low voltage application such as cellular phone and notebook，computer power management and other battery powered circuits，where high-side switching and low in-line power loss are needed in a ，very small outline surface mount package.

　　APPLICATIONS

　　● Power Management in Note book

　　● Portable Equipment

　　● Battery Powered System

　　● DC/DC Converter

　　● Load Switch

　　● DSC

　　● LCD Display inverter