贝岭BLG20T65FULA-P高压, IGBT绝缘栅双极晶体管

半导体芯片 0 57
Image Description

introduce

BLG20T65FULA is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat) , optimized switching performance and low gate charge Qg. The IGBT is suitable device for BLDC, UPS, and low VCE(sat) pplications.


characteristic

Fast switching

Low VCE(sat)

Positive temperature coefficient

Very soft, fast recovery anti-parallel diode

RoHS product



Image Description

也许您对下面的内容还感兴趣:

留言0

评论

◎欢迎参与讨论,请在这里发表您的看法、交流您的观点。