描述
WMOSTM DM是硅N沟道增强型VDMOSFET，采用自对准平面技术获得，可降低导通损耗，提高开关性能，增强雪崩能量。 该晶体管可用于各种功率开关电路，以实现系统小型化和更高效率。
特征
快速切换
典型。 RDS(on) =2.3Ω
低栅极电荷（典型值 Qg = 12.5C）
典型。 Crss = 4.1pF
100% UIS 测试
应用
LED照明、充电器、适配器、PC、液晶电视、服务器
Part Package Marking Packing method
WML04N65DM TO-220F WML04N65DM Tube
WMN04N65DM TO-262 WMN04N65DM Tube
WMO04N65DM TO-252 WMO04N65DM Tape and Reel
WMP04N65DM TO-251 WMP04N65DM Tube
WMH04N65DM TO-251S2 WMH04N65DM Tube
WMG04N65DM TO-251S3 WMG04N65DM Tube
Description
WMOSTM DM, the silicon N-channel enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Features
Fast Switching
Typ. RDS(on) =2.3Ω
Low Gate Charge (Typ. Qg = 12.5C)
Typ. Crss = 4.1pF
100% UIS Tested
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server
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